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 BAS16HT1G — Small Signal Diode ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS16HT1G Rev. A1 2 Typical Performance Characteristics Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100μA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100V Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100μA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10mA Figure 5. Forward Voltage vs Forward Current VF - 10 - 800mA Figure 6. Total Capacitance 11 0 1 2 3 5 10 20 30 50 100 120 130 140 150 Ta= 25°C Reverse Current, IR [uA] R Reverse Voltage, V R [v] 300 Ta= 25°C R [v] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 010 20 30 50 70 100 50 100 150 200 250 Reverse Voltage, V Reverse Current, I R [nA] 225 1 2 3 5 10 20 30 50 100 250 300 350 400 450 Ta= 25°C Forward Current, IF [uA] Forward Voltage, V F [mV] F F 485 4500.1 0.2 0.3 0.5 1 2 3 5 10 500 550 600 650 Ta= 25°C700 Forward Current, IF [mA] Forward Voltage, V F [mV] F 725 0.610 20 30 50 100 200 300 500 0.8 1 1.2 1.4 Forward Current, IF [mA] Forward Voltage, V F [V] F 1.5 Ta= 25°C 10246810121415 1.1 1.2 1.3 Ta = 2 5°C Reverse Voltage [V] Total Capacitance, C T [pF] |